National Semiconductor has developed a proprietary silicon-on-insulator (SOI) BiCMOS analog process technology specifically for operational amplifier applications in the 0.9 V to 12 V supply voltage ...
Six operational amplifiers from National Semiconductor Corp. feature significant improvements in accuracy, low power consumption and voltage noise for industrial, medical and automotive applications.
The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for ...
Abstract: We can apply a BiCMOS integrated circuit with only resistors and no transistors to solve a difficult design problem. The mythically perfect operational amplifier’s gain and temperature ...
The size and cost of many devices, such as cell phones, pagers and portable digital assistants, can be reduced by taking advantage of cell libraries to integrate additional functions onto BiCMOS ...
The RJP01 is 1.920 to 1.980 GHz high efficiency WCDMA Power Amplifier. The Amplifier is designed using 0.18 um SiGe BiCMOS technology. Power amplifier ...
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