Renesas Electronics Corporation announced two new photocouplers PS9332L and PS9332L2, with an integrated insulated-gate bipolar transistor (IGBT) [Note 1] protection function, for applications such as ...

While punch throughs (PTs) are the preferred power device for a growing segment of industrial power conversion applications requiring operation from ac line voltages of 575Vac to 690Vac, historically, ...

In this paper the latest IGBT and free wheel diode chip technologies are utilized in new industrial IGBT modules with reduced size and weight. Chip technology refinement and optimization are employed ...

Toshiba Electronics Europe has announced the GT40WR21, an igbt with an integrated reverse recovery diode that offers a voltage rating of 1800V. The N channel device is suitable for induction heating ...

TOKYO, January 14, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as ...

Mitsubishi launched three high current 1.2kV three phase IGBT modules at PCIM in Nuremberg, in transfer-moulded packages. Branded ‘Large DIPIPM+’, the modules include high and low-side drive ICs. “Of ...

ROHM has developed Hybrid IGBTs that come with an integrated 650V SiC Schottky barrier diode, the RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR). The devices are qualified under the ...

LINCOLN, England, Oct. 31, 2018 /CNW/ - Dynex Power Inc. (TSXV: DNX), a leading manufacturer of high power semiconductors and electronic equipment, is pleased to announce the launch of ...

Key specifications that separate this new IGBT apart from others. What is a freewheeling diode? The multiple benefits of using SiC over silicon. As automakers and tier 1s strive to develop more ...

ROHM intends to move into mass production of its hybrid IGBTs with integrated 650V SiC Schottky barrier diode in December. The RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR devices are ...