The MB85R2001 is 2 Mbit Ferroelectric Random Access Memory (FRAM) chip packaged on a 48-pin plastic TSOP and operating at a temperature range of -20°C to +85°C. It has 10 years of data retention and ...
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming ...
Just as magnetic materials have opposing North and South poles, ferroelectric materials have opposing positive charges and negative charges that exhibit measurable differences in electric potential.
COLORADO SPRINGS, Colo.--(BUSINESS WIRE)--Oct. 18, 2004--Ramtron International Corporation (Nasdaq:RMTR), the leading supplier of nonvolatile ferroelectric semiconductor products, today announced that ...
Introduced as the first nonvolatile memory to feature unlimited endurance, the 256-Kb, 3V FM18L08 ferroelectric random access memory (FRAM) offers an unlimited number of read and write ...
Offered as the first in a line of Problem Solver Memories, the FM3808 of ferroelectric random access memory (FRAM) chip combines a 256 Kb nonvolatile FRAM memory with a real-time clock and ...
Ferroelectric random access memory, or FeRAM, has long promised to offer a low-power alternative to flash computer memory, but its limited endurance cannot offset its deficiency in density such that ...
A new technical paper titled “Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model” was published by researchers at Georgia Tech, imec and National Technical University ...
I reached out to a few folks to be sure to answer your question properly. Roger Stewart, a patent expert in the radio frequency identification field, says all chips he knows of use EEPROM memory, not ...
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