Gallium oxide (Ga₂O₃) is a semiconductor material that could make electronic devices much more energy-efficient than current silicon-based technology. Electronic diodes require two types of ...

Gallium oxide (Ga2O3) thin films have emerged as a material of significant interest owing to their ultrawide bandgap and robust chemical and thermal stability. These films offer promising avenues for ...

Electron transport in gallium nitride (GaN) and zinc oxide (ZnO) remains a field of intense study due to the promise these wide energy gap semiconductors hold for high-power, high-frequency and ...

Insights into atomic-scale defects may enable next-generation thin-film transistors for smartphones, televisions, and flexible electronics. (Nanowerk News) Many displays found in smartphones and ...

Using hard X-ray photoemission spectroscopy, researchers revealed how oxygen vacancies and structural disorder influence subgap state formation. The figure shows the InGaZnO 4 crystal structure, the ...