Semiconductor Engineering

Process Variation Analysis Of Device Performance Using Virtual Fabrication — Methodology Demonstrated On A CMOS 14-nm FinFET Vehicle

A new methodology to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. August 18th, 2021 - By: Coventor A new methodology ...
Semiconductor Engineering

Effects of a Random Process Variation on the Transfer Characteristics of a Fundamental Photonic Integrated Circuit Component

Silicon photonics is rapidly emerging as a promising technology to enable higher bandwidth, lower energy, and lower latency communication and information processing, and other applications. In silicon ...
EDN

Solido Design Launches New Process Variation Solution to Solve Well Proximity Effect Problems for Sub-90 nm Analog Designs

San Jose, Calif. – June 23, 2009 – Solido Design Automation, a leading developer of software for eliminating design loss caused by process variation in analog/mixed-signal and custom integrated ...
EDN

MagnaChip Unveils 0.13um Triple Gate Oxide CMOS Process for Wide Voltage, Mixed-Signal Applications

This 0.13um triple gate oxide CMOS process features one additional layer of gate oxide introducing 1.8V CMOS into a standard 1.2/3.3V CMOS array on 0.13um technology. This process is fully compatible ...
Nature

Low Power Design in CMOS and FinFET Logic Circuits

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...