Electric vehicles are about to gain a new kind of fast charging lane, one that hides in the asphalt instead of standing in a parking lot. Infineon’s latest silicon carbide power modules are turning ...

V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.

Infineon Technologies will supply Silicon Carbide (SiC) power modules HybridPACK Drive G2 CoolSiC and bare die products to Xiaomi's EVs, including the recently announced SU7, until 2027, according to ...

Santa Clara, CA and Kyoto, Japan, Aug. 29, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of power modules equipped with 4 th generation SiC MOSFET bare chips for the ...

More efficient, smaller, and lighter traction inverters for EVs can be created by integrating current sensors directly into SiC-based power modules. Silicon Austria Labs (SAL), a power semiconductor ...

Rohm Semiconductor has announced the use of power modules equipped with the company's fourth-generation SiC MOSFET bare chips for traction inverters in three ZEEKR EV models manufactured by Zhejiang ...

SemiQ’s new 1200V modules in full-bridge packages are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFETs categories. SemiQ’s high-performance 1200V SiC modules are tested to above 1400V and are designed to ...

SemiQ’s 1200-V SiC MOSFETs can be copackaged with or without a 1200-V SiC Schottky barrier diode (SBD) in SOT-227 packages. The QSiC modules provide a breakdown voltage of >1400 V and low ...

The MarketWatch News Department was not involved in the creation of this content. Quest of End-use Industries to Reduce Carbon Footprint Driving Demand for Energy-Efficient SiC & GaN Power ...

Hillcrest ZVS-enabled power modules are expected to offer new levels of power density, system efficiency, performance and reliability for EV applications up to 1,000 volts Potential to reduce or even ...